METHODS OF FORMING SEMICONDUCTOR STRUCTURES INCLUDING BODIES OF SEMICONDUCTOR MATERIAL

摘要

Semiconductor structures that include bodies of a semiconductor material spaced apart from an underlying substrate. The bodies may be physically separated from the substrate by at least one of a dielectric material, an open volume and a conductive material. The bodies may be electrically coupled by one or more conductive structures, which may be used as an interconnect structure to electrically couple components of memory devices. By providing isolation between the bodies, the semiconductor structure provides the properties of a conventional SOI substrate (e.g., high speed, low power, increased device density and isolation) while substantially reducing fabrication acts and costs associated with such SOI substrates. Additionally, the semiconductor structures of the present disclosure provide reduced parasitic coupling and current leakage due to the isolation of the bodies by the intervening dielectric material.

主权项

1. A method of forming a semiconductor structure, the method comprising:
forming first trenches by removing portions of a semiconductor material, remaining portions of the semiconductor material forming bodies of the semiconductor material; completely filling the first trenches with a first dielectric material; forming second trenches, each of the second trenches residing between adjacent first trenches; laterally removing material from within each of the second trenches to form openings extending under the bodies of the semiconductor material and to space at least a portion of each of the bodies apart from a substrate; and completely filling the second trenches and the openings with a second dielectric material, the second dielectric material disposed between the bodies of semiconductor material and substrate.