发明名称 |
METHOD FOR INDIUM SPUTTERING AND FOR FORMING CHALCOPYRITE-BASED SOLAR CELL ABSORBER LAYERS |
摘要 |
A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a;CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap. |
申请公布号 |
US2014206132(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201414219628 |
申请日期 |
2014.03.19 |
申请人 |
TSMC SOLAR LTD. |
发明人 |
YEN Wen-Tsai;WU Chung-Hsien;CHEN Shih-Wei;LEE Wen-Chin |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a solar cell, said method comprising:
providing a target of indium and a further material selected from the group consisting of Al, Zn, Cr, Ni, and Ta; providing a substrate with a back contact layer thereon; forming metallic precursor layers over said back contact layer including sputtering materials of said target onto said substrate over said back contact layer; and thermally processing thereby converting said metal precursor layers to an absorber layer. |
地址 |
Taichung City TW |