发明名称 METHOD FOR INDIUM SPUTTERING AND FOR FORMING CHALCOPYRITE-BASED SOLAR CELL ABSORBER LAYERS
摘要 A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a;CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.
申请公布号 US2014206132(A1) 申请公布日期 2014.07.24
申请号 US201414219628 申请日期 2014.03.19
申请人 TSMC SOLAR LTD. 发明人 YEN Wen-Tsai;WU Chung-Hsien;CHEN Shih-Wei;LEE Wen-Chin
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method for forming a solar cell, said method comprising: providing a target of indium and a further material selected from the group consisting of Al, Zn, Cr, Ni, and Ta; providing a substrate with a back contact layer thereon; forming metallic precursor layers over said back contact layer including sputtering materials of said target onto said substrate over said back contact layer; and thermally processing thereby converting said metal precursor layers to an absorber layer.
地址 Taichung City TW