CMOS Image Sensor White Pixel Performance

摘要

A method includes forming a photodiode in a substrate and forming source and drain regions in the substrate. A first rapid thermal anneal (RTA) process is performed to anneal the source and drain regions in the substrate. After forming the source and drain regions, a thermal oxide layer is grown over the photodiode by performing a second RTA process. A thickness of the thermal oxide layer is limited to a thickness required to enclose a damaged portion of a surface of the photodiode.

主权项

1. A method, comprising:
forming a photodiode in a substrate; forming source and drain regions in the substrate, including performing a first rapid thermal anneal (RTA) process to anneal the source and drain regions in the substrate; and after forming the source and drain regions, growing a thermal oxide layer over the photodiode by performing a second RTA process, wherein a thickness of the thermal oxide layer is limited to a thickness required to enclose a damaged portion of a surface of the photodiode.