| 摘要 |
The present invention relates to a method for manufacturing slanted copper nanorods, comprising the steps of: manufacturing a sample in a structure where a wafer includes an etch stop layer; etching the sample by positioning the sample in a slanted shape; plating and forming a copper (Cu) film on the slanted sample; removing an excessively plated portion from the Cu film; and removing polysilicon (poly-Si) except for Cu from the surface of the sample. According to the present invention, compared with the existing methods, large area manufacturing is possible, and thus a nanostructure having an excellent process throughput and an uniform array can be formed, and angles and diameters of copper nanorods can be arbitrarily adjusted, and thus the applicability thereof is very high, and in addition, the copper nanorods can be applied to methods for manufacturing various elements such as semiconductors, micro electromechanical systems (MEMS), optical elements, gas detection devices, display elements and the like. |
