METHODS OF LOW TEMPERATURE PREPARATION OF ONE OR MORE LAYERS OF GRAPHENE ON A METALLIC SUBSTRATE FOR ANTI-CORROSION AND ANTI-OXIDATION APPLICATIONS

摘要

Method of preparing one or more layers of graphene on a metallic substrate is provided. The method includes annealing a metallic substrate at a first temperature in a range of about 600 °C to about 800 °C in a hydrogen-containing environment to reduce surface oxides on the metallic substrate; cooling the metallic substrate to a second temperature of around 600 °C or lower for graphene growth; providing a carbon vapor by decomposing a solid carbon source at a temperature in a range of about 200 °C to about 400 °C and contacting the carbon vapor with the metallic substrate to form one or more layers of graphene on the metallic substrate at the second temperature. Metallic substrates comprising one or more graphene layers thus prepared, and use of the method and metallic substrate in anti-corrosion applications, paint, and in anti-oxidation applications for electronic devices and magnetic devices are also provided.