| 摘要 |
In order to provide a semiconductor device with high electrostatic discharge (ESD) tolerance, ground voltage wiring (22a) is electrically connected to wiring (22b) from a ground voltage pad for external connection at one end of the ground voltage wiring (22a) in the wiring direction. Input voltage wiring (23a) is electrically connected to wiring (23b) from an input voltage pad for external connection at one end of the input voltage wiring (23a) in the wiring direction. The one end of the ground voltage wiring (22a) and the one end of the input voltage wiring (23a) are centered on the center of an N-type metal-oxide-semiconductor (NMOS) transistor (10), and serve as semiconductor devices (IC) that roughly opposite each other. |
