| 摘要 |
In a silicon carbide substrate (11) having a first main surface (11a) and a second main surface (11b) which face each other, silicon carbide on the second main surface (11b) side of the silicon carbide substrate (11) is removed while fixing the silicon carbide substrate (11) on a base (90) that has higher flexibility than that of the silicon carbide substrate (11), thereby forming an electrode (14) on the second main surface (11b). The base (90) has a surface area that is equal to or smaller than that of the first main surface (11a) of the silicon carbide substrate (11). In a step of fixing the silicon carbide substrate (11) on the base (90), the base (90) is placed at a position at which the base (90) covers the center (11c) of the first main surface (11a) so that the base (90) does not lie off the outer periphery (11h) of the first main surface (11a). In this manner, the contact resistance between the silicon carbide substrate (11) and the electrode (14) can be reduced, and a method for producing a silicon carbide semiconductor device, which enables the production of a silicon carbide semiconductor device in a simple manner, can be provided. |
