Method for the low-temperature production of radial-junction semiconductor nanostructures, radial junction device, and solar cell including radial-junction nanostructures

摘要

The present invention relates to a method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate (2), including the steps of: a) forming metal aggregates (2) on said substrate (2), said metal aggregates being capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires (1) in the presence of one or more non-dopant precursor gases of said first semiconductor material, the substrate (2) being heated to a temperature at which said metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires (1) in the vapor phase being catalyzed by said metal aggregates (3); c) rendering the residual metal aggregates (3) inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between said nanowire and said at least one doped thin film. The invention also relates to a solar cell including a plurality of radial electronic junction nanostructures produced according to the invention.