| 摘要 |
PROBLEM TO BE SOLVED: To ensure operation stability at the time of light irradiation and inhibit heat generation of an insulation protection layer due to light irradiation.SOLUTION: An oxide semiconductor element comprises: an oxide semiconductor layer containing at least one selected from a group consisting of In, Zn, Ga and Sn; a pair of electrodes which can be electrically connected with each other via the oxide semiconductor layer; and a laminated structure of three and more layers laminated on the oxide semiconductor layer. The first layer 24adjacent to the oxide semiconductor layer has an absolute refractive index lower than that of the oxide semiconductor layer, and the second layer 24has an absolute refractive index higher than that of the first layer 24, and each layer following the second layer has a high-and-low relationship in an absolute refractive index with the previous layer, which is alternately reversal. When assuming that a thickness of each layer including the first layer 24is dnm (k: lamination order from oxide semiconductor layer side), an absolute refractive index of each layer is n, the oxide semiconductor element includes the insulation protection layer which satisfies 400(nm)/4n≤d(nm)≤450(nm)/4n. And provided are a manufacturing method of the oxide semiconductor element and an application of the oxide semiconductor element. |
