| 发明名称 |
METHOD FOR PRODUCING AN ORGANISED NETWORK OF SEMICONDUCTOR NANOWIRES, IN PARTICULAR MADE OF ZnO |
| 摘要 |
A method of forming an organized network of ZnO nanowires including the steps of obtaining, on a substrate, a ZnO layer of Zn polarity, by epitaxial growth at low temperature, advantageously in the range from 400° C. to 650° C., and advantageously in the presence of dioxygen (O2); forming, on this layer, a mask provided with openings for the subsequent growth of nanorods; epitaxially growing ZnO nanorods. |
| 申请公布号 |
US2014202378(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201414225854 |
申请日期 |
2014.03.26 |
| 申请人 |
Commissariat A L'Energie Atomique Et Aux Energies Alternatives |
发明人 |
THIERRY Robin;FERRET Pierre;LAFOSSAS Matthieu;PERILLAT-MERCEROZ Guillaume |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming an organized network of ZnO nanowires comprising the steps of:
obtaining, on a substrate, a ZnO layer of Zn polarity, by epitaxial growth at low temperature, advantageously in the range from 400° C. to 650° C., and advantageously in the presence of oxygen, advantageously (O2); forming, on this layer, a mask provided with openings for the subsequent growth of nanorods; epitaxially growing ZnO nanorods. |
| 地址 |
Paris FR |
