| 摘要 |
Provided is a mask blank in which, even when a silicon-based material is applied to the material forming a phase-shift film, there is a high uniformity in composition and optical characteristics in the in-plane and film thickness directions of the phase-shift film, a high uniformity in composition and optical characteristics of the phase-shift films between a plurality of substrates, and a low defectivity. A mask blank in which a phase-shift film, which has a function of transmitting ArF exposure light at a predetermined transmittance and causing a predetermined amount of phase shift on the transmitted ArF exposure light, is provided on a translucent substrate, wherein: the phase-shift film includes a structure in which a low-transmission layer and a high-transmission layer are layered; the low-transmission layer and the high-transmission layer are formed from a material comprising silicon and nitrogen, or a material in which one or more elements selected from metalloid elements, non-metallic elements, and rare gases is contained in the material comprising silicon and nitrogen; and the low-transmission layer has a lower nitrogen content in relation to the high-transmission layer. |
