| 发明名称 |
TFT STRUCTURE, LCD DEVICE, AND METHOD FOR MANUFACTURING TFT |
| 摘要 |
A thin film transistor (TFT) structure includes a first metal layer. The first metal layer is configured with an insulating layer, a surface of the insulating layer corresponding to an area above the first metal layer is configured with an active layer made of an indium gallium zinc oxide (IGZO), a second metal layer is formed on a surface of the active layer, the second metal layer is configured with a gap on an upper surface of the active layer, and a groove is formed at the upper surface of the active layer corresponding to an area of the gap. |
| 申请公布号 |
US2014204305(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201313824346 |
申请日期 |
2013.02.27 |
| 申请人 |
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
Tseng Chihyuan |
| 分类号 |
H01L29/786;G02F1/1362;H01L21/3213;G02F1/1368;H01L29/66;H01L29/40 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor (TFT) structure, comprising;
a first metal layer, wherein the first metal layer is configured with an insulating layer, a surface of the insulating layer corresponding to an area above the first metal layer is configured with an active layer made of an indium gallium zinc oxide (IGZO), a second metal layer is formed on a surface of the active layer, the second metal layer is configured with a gap on an upper surface of the active layer, and a groove is formed at the upper surface of the active layer corresponding to an area of the gap. |
| 地址 |
Shenzhen, Guangdong CN |
