METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER

摘要

There is provided a method that includes forming a sacrificial layer and the semiconductor crystal layer on a semiconductor crystal layer formation wafer in the stated order, bonding together the semiconductor crystal layer formation wafer and a transfer-destination wafer such that a first surface of the semiconductor crystal layer and a second surface of the transfer-destination wafer face each other, and splitting the transfer-destination wafer from the semiconductor crystal layer formation wafer with the semiconductor crystal layer remaining on the transfer-destination wafer side, by etching away the sacrificial layer by immersing the semiconductor crystal layer formation wafer and the transfer-destination wafer wholly or partially in an etchant. Here, the transfer-destination wafer includes an inflexible wafer and an organic material layer, and a surface of the organic material layer is the second surface.

主权项

1. A method for producing a composite wafer including a semiconductor crystal layer, the method comprising:
forming, in order, a sacrificial layer and the semiconductor crystal layer directly or indirectly on a semiconductor crystal layer formation wafer; bonding together the semiconductor crystal layer formation wafer and a transfer-destination wafer such that a first surface and a second surface face each other, the first surface being a surface of any layer formed directly or indirectly on the semiconductor crystal layer formation wafer, and the second surface being a surface of the transfer-destination wafer or of any layer formed directly or indirectly on the transfer-destination wafer and is to be in contact with the first surface; and splitting the transfer-destination wafer from the semiconductor crystal layer formation wafer with the semiconductor crystal layer remaining on the transfer-destination wafer side, by etching away sacrificial layer by immersing the semiconductor crystal layer formation wafer and the transfer-destination wafer wholly or partially in an etchant, and wherein the transfer-destination wafer comprises an inflexible wafer and an organic material layer, and the surface of the organic material layer is the second surface.