Reduced Substrate Coupling for Inductors in Semiconductor Devices

摘要

The present disclosure provides reduced substrate coupling for inductors in semiconductor devices. A method of fabricating a semiconductor device having reduced substrate coupling includes providing a substrate having a first region and a second region. The method also includes forming a first gate structure over the first region and a second gate structure over the second region, wherein the first and second gate structures each include a dummy gate. The method next includes forming an inter layer dielectric (ILD) over the substrate and forming a photoresist (PR) layer over the second gate structure. Then, the method includes removing the dummy gate from the first gate structure, thereby forming a trench and forming a metal gate in the trench so that a transistor may be formed in the first region, which includes a metal gate, and an inductor component may be formed over the second region, which does not include a metal gate.

主权项

1. A semiconductor device comprising:
a substrate having a first region and a second region; a first gate structure formed over the first region, wherein the first gate structure includes a metal gate; a second gate structure formed over the second region, wherein the second gate structure includes a non-metal dummy gate; an inter layer dielectric (ILD) formed over the substrate; and an inductor component formed over the second region.