| 发明名称 |
METHOD OF MAKING A NON-VOLATILE MEMORY (NVM) CELL STRUCTURE |
| 摘要 |
A non-volatile memory device includes a substrate and a charge storage layer. The charge storage layer comprises a bottom layer of oxide, a layer of discrete charge storage elements on the bottom layer of oxide, and a top layer of oxide on the charge storage elements. A control gate is on the top layer of oxide. A surface of the top layer of oxide facing a surface of the control gate is substantially planar. |
| 申请公布号 |
US2014203347(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201313748808 |
申请日期 |
2013.01.24 |
| 申请人 |
WINSTEAD BRIAN A.;KANG SUNG-TAEG;ROSSOW MARC A. |
发明人 |
WINSTEAD BRIAN A.;KANG SUNG-TAEG;ROSSOW MARC A. |
| 分类号 |
H01L29/40;H01L29/423 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A non-volatile memory device comprising:
a substrate; a charge storage layer comprising: a bottom layer of oxide; a layer of discrete charge storage elements on the bottom layer of oxide; a top layer of oxide on the discrete charge storage elements; and a control gate on the top layer of oxide, wherein a surface of the top layer of oxide facing a surface of the control gate is substantially planar, and wherein a radius of curvature of the top layer of oxide over a majority of the discrete charge storage elements is at least twice a sum of a radius of the discrete charge storage element plus a thickness of the top layer of oxide. |
| 地址 |
AUSTIN TX US |
