发明名称 |
SUBSTRATE FOR MOUNTING ELEMENT AND PROCESS FOR ITS PRODUCTION |
摘要 |
To provide a substrate for mounting element having sulfurization resistance improved by increasing planarity of the surface of a thick conductor layer.;The substrate 10 for mounting element of the present invention has such a structure that on a surface of a LTCC substrate or ceramics substrate as an inorganic insulating substrate 1, a thick conductor layer 2 is formed as an element connection terminal. The thick conductor layer 2 is made of a metal composed mainly of silver (Ag) or copper (Cu) and formed by printing and firing a metal paste. This thick conductor layer has its surface planarized by wet blast treatment to a surface roughness Ra of at most 0.02 μm. A Ni/Au-plated layer 3 is formed on the thick conductor layer 2, so that the surface of the thick conductor layer 2 is completely covered without any space. |
申请公布号 |
US2014201993(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201414219583 |
申请日期 |
2014.03.19 |
申请人 |
Asahi Glass Company, Limited |
发明人 |
NAKAYAMA Katsuyoshi |
分类号 |
H05K3/30 |
主分类号 |
H05K3/30 |
代理机构 |
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代理人 |
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主权项 |
1. A process for producing a substrate for mounting element, which comprises:
a step of forming a thick conductor layer-provided substrate having a thick conductor layer made of a metal composed mainly of silver (Ag) or copper (Cu), on a surface of an inorganic insulating substrate made of an inorganic insulating material, a step of applying wet blast treatment to the thick conductor layer to planarize the surface of the thick conductor layer to a surface roughness Ra of at most 0.02 μm, and a step of forming a nickel (Ni)/gold (Au)-plated layer on the thick conductor layer having the surface planarized by the wet blast treatment. |
地址 |
Chiyoda-ku JP |