发明名称 SUBSTRATE FOR MOUNTING ELEMENT AND PROCESS FOR ITS PRODUCTION
摘要 To provide a substrate for mounting element having sulfurization resistance improved by increasing planarity of the surface of a thick conductor layer.;The substrate 10 for mounting element of the present invention has such a structure that on a surface of a LTCC substrate or ceramics substrate as an inorganic insulating substrate 1, a thick conductor layer 2 is formed as an element connection terminal. The thick conductor layer 2 is made of a metal composed mainly of silver (Ag) or copper (Cu) and formed by printing and firing a metal paste. This thick conductor layer has its surface planarized by wet blast treatment to a surface roughness Ra of at most 0.02 μm. A Ni/Au-plated layer 3 is formed on the thick conductor layer 2, so that the surface of the thick conductor layer 2 is completely covered without any space.
申请公布号 US2014201993(A1) 申请公布日期 2014.07.24
申请号 US201414219583 申请日期 2014.03.19
申请人 Asahi Glass Company, Limited 发明人 NAKAYAMA Katsuyoshi
分类号 H05K3/30 主分类号 H05K3/30
代理机构 代理人
主权项 1. A process for producing a substrate for mounting element, which comprises: a step of forming a thick conductor layer-provided substrate having a thick conductor layer made of a metal composed mainly of silver (Ag) or copper (Cu), on a surface of an inorganic insulating substrate made of an inorganic insulating material, a step of applying wet blast treatment to the thick conductor layer to planarize the surface of the thick conductor layer to a surface roughness Ra of at most 0.02 μm, and a step of forming a nickel (Ni)/gold (Au)-plated layer on the thick conductor layer having the surface planarized by the wet blast treatment.
地址 Chiyoda-ku JP