| 摘要 |
This solid-state imaging element is provided with: a substrate that is formed of a first semiconductor; a photoelectric conversion element that is provided on the substrate and sequentially comprises, from the substrate side, a first electrode, a photoelectric conversion layer and a second electrode; and a plurality of field effect transistors for reading a signal from the photoelectric conversion element. The plurality of transistors include a transfer transistor and an amplifier transistor, and the transfer transistor comprises an active layer that contains a second semiconductor that has a larger band gap than the first semiconductor. One of the source terminal and the drain terminal of the transfer transistor also serves as the first electrode or the second electrode of the photoelectric conversion element, and the other terminal is connected to the gate of the amplifier transistor. |
