| 摘要 |
Provided are a semiconductor device and a manufacturing method thereof. The device comprises: a fin structure formed on a substrate (1000); an isolating layer (1006) formed on the substrate, wherein a part of the fin structure is exposed out of the isolating layer (1006), and the exposed part of the fin structure serves as a fin (1004) of the semiconductor device; and a gate stack formed on the isolating layer (1006) and intersecting the fin (1004), wherein a penetration blocking portion (1020) is only formed in a region below the intersecting part of the fin (1004) and the gate stack. |
