METHOD FOR POLISHING A SEMICONDUCTOR WAFER

摘要

A method for polishing at least one wafer composed of semiconductor material that has a front side and the rear side includes performing at least one first polishing step including simultaneously polishing both front and rear sides of the at least one wafer at a process temperature between an upper polishing plate and a lower polishing plate. Each of the upper polishing and lower polishing plates is covered with a polishing pad having an inner edge and an outer edge, a hardness of at least 80° Shore A, a compressibility of less than 2.5%, and respective upper and lower surfaces that come into contact with the wafer being polished. The upper and lower surfaces form a polishing gap extending from the inner edge to the outer edge. A height of the polishing gap at the inner edge differs linearly from the height of the polishing gap at the outer edge.

主权项

1: A method for polishing at least one wafer composed of semiconductor material having a front side and the rear side, the method comprising:
performing at least one first polishing step including simultaneously polishing both front and rear sides of the at least one wafer at a process temperature between an upper polishing plate and a lower polishing plate, each of the upper polishing plate and lower polishing plate being covered with a polishing pad having an inner edge and an outer edge, a hardness of at least 80° Shore A, a compressibility of less than 2.5%, and respective upper and lower surfaces that come into contact with the wafer being polished, wherein the upper and lower surfaces form a polishing gap extending from an inner edge of the polishing pad to an outer edge of the polishing pad, and wherein a height of the polishing gap at the inner edge differs linearly from the height of the polishing gap at the outer edge.