发明名称 METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS
摘要 Methods are provided for forming a nanostructure array. An example method includes providing a first layer, providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating, disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer, and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric. Numerous other aspects are provided.
申请公布号 US2014206182(A1) 申请公布日期 2014.07.24
申请号 US201414251092 申请日期 2014.04.11
申请人 SanDisk Corporation 发明人 Chen Jian;Cruden Karen Chu;Duan Xiangfeng;Liu Chao;Parce J. Wallace
分类号 H01L21/28 主分类号 H01L21/28
代理机构 代理人
主权项 1. A method for forming a nanostructure array, the method comprising: providing a first layer; providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating; disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer; and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric.
地址 Milpitas CA US