发明名称 |
METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE |
摘要 |
The solid-state imaging device in which pixel electrodes, a photoelectric conversion portion having an organic film generating electric charge in response to incident light, a transparent counter electrode, and a sealing layer are formed on a substrate is produced by the method including causing a metal mask to come into close contact with a substrate surface, on which the pixel electrodes are disposed, by magnetic force; forming the organic film by vapor-depositing an organic substance to the substrate surface on which the pixel electrodes are disposed; removing the metal mask after the organic film is formed; forming the counter electrode on the organic film; and forming the sealing layer covering the counter electrode, wherein the metal mask has undergone half etching to have a half etching portion and comes into close contact with the substrate surface such that a lower surface of the half etching portion faces the pixel electrodes. |
申请公布号 |
US2014206128(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201414221172 |
申请日期 |
2014.03.20 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
NAKATANI Toshihiro |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A method for producing a solid-state imaging device in which pixel electrodes, a photoelectric conversion portion that has an organic film generating electric charge in response to incident light, a transparent counter electrode, and a sealing layer are formed on a substrate, the method comprising the steps of:
causing a metal mask to come into close contact with a substrate surface, on which the pixel electrodes are disposed, by magnetic force; forming the organic film by vapor-depositing an organic substance to the substrate surface on which the pixel electrodes are disposed; removing the metal mask after the organic film is formed; forming the counter electrode on the organic film; and forming the sealing layer covering the counter electrode, wherein the metal mask has undergone half etching to have a half etching portion and comes into close contact with the substrate surface such that a lower surface of the half etching portion faces the pixel electrodes. |
地址 |
Tokyo JP |