METHOD FOR REDUCING CHARGE IN CRITICAL DIMENSION-SCANNING ELECTRON MICROSCOPE METROLOGY

摘要

Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (SEM) metrology of a critical dimension (CD) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure. When the lithography structure comprising the silicon-comprising under layer is scanned for CDs using SEM, the under layer reduces or eliminates charge buildup during SEM metrological observations.

主权项

1. A method for producing a surface of interest in the manufacture of an integrated device, the method comprising the steps of:
(a) providing a substrate; (b) positioning a silicon-comprising under layer on the substrate; and (c) positioning a patterned photoresist image layer on the under layer.