MEMORY DEVICE AND SEMICONDUCTOR DEVICE

摘要

Provided is a memory device with reduced overhead power. A memory device includes a first circuit retaining data in a first period during which a power supply voltage is supplied; a second circuit saving the data retained in the first circuit in the first period and retaining the data saved from the first circuit in a second period during which the power supply voltage is not supplied; and a third circuit saving the data retained in the second circuit in the second period and retaining the data saved from the second circuit in a third period during which the power supply voltage is not supplied. The third circuit includes a transistor in which a channel formation region is provided in an oxide semiconductor film and a capacitor to which a potential corresponding to the data is supplied through the transistor.

主权项

1. A memory device comprising:
a first circuit, the first circuit retaining data in a first period during which a power supply voltage is supplied; a second circuit, the second circuit saving the data retained in the first circuit in the first period and retaining the data in a second period during which the power supply voltage is not supplied; and a third circuit, the third circuit saving the data retained in the second circuit in the second period and retaining the data in a third period during which the power supply voltage is not supplied, wherein the third circuit comprises a first transistor in which a channel formation region is provided in an oxide semiconductor film and a first capacitor to which a first potential corresponding to the data is supplied through the first transistor.