| 发明名称 |
APPLYING A VOLTAGE-DELAY CORRECTION TO A NON-DEFECTIVE MEMORY BLOCK THAT REPLACES A DEFECTIVE MEMORY BLOCK BASED ON THE ACTUAL LOCATION OF THE NON-DEFECTIVE MEMORY BLOCK |
| 摘要 |
In an embodiment, a defective memory block is replaced with a non-defective memory block, and a voltage-delay correction is applied to the non-defective memory block that replaces the defective memory block based on the actual location of the non-defective memory block. |
| 申请公布号 |
US2014204693(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201414224543 |
申请日期 |
2014.03.25 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Sarin Vishal;Nguyen Dzung H.;Radke William H. |
| 分类号 |
G11C29/04 |
主分类号 |
G11C29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of operating a memory device, comprising:
replacing a defective memory block with a non-defective memory block; and applying a voltage-delay correction to the non-defective memory block that replaces the defective memory block based on the actual location of the non-defective memory block. |
| 地址 |
Boise ID US |
