发明名称 METHOD OF DRIVING PHASE CHANGE MEMORY DEVICE CAPABLE OF REDUCING HEAT DISTURBANCE
摘要 A method of driving phase change memory device includes initializing all memory cells and programming individually at least two selected memory cells disposed at random positions, wherein the selected memory cells are selected among the initialized memory cells.
申请公布号 US2014204664(A1) 申请公布日期 2014.07.24
申请号 US201414219549 申请日期 2014.03.19
申请人 SK HYNIX INC. 发明人 LEE Se Ho
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A method of driving a phase change memory device including a plurality of memory cells disposed at intersections of a plurality of word lines and a plurality of bit lines crossing each other, the method comprising: initializing all memory cells; and programming individually at least two selected memory cells disposed at random positions, wherein the selected memory cells are selected among the initialized memory cells.
地址 Gyeonggi-do KR