| 发明名称 |
Memory Cell Flipping for Mitigating SRAM BTI |
| 摘要 |
An apparatus may comprise a memory cell configured to operate according to a voltage mode, a voltage controller coupled with the memory cell, wherein the voltage controller is configured to change the voltage mode of the memory cell between a low voltage mode and a high voltage mode, and a memory controller module coupled with the memory cell, wherein the memory controller is configured to invert a logic state stored in the memory cell based on the voltage mode. |
| 申请公布号 |
US2014204658(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201313749672 |
申请日期 |
2013.01.24 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
Wuu John J.;Kasprak Keith A.;Schreiber Russell |
| 分类号 |
G11C11/412;G11C7/00 |
主分类号 |
G11C11/412 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a memory cell configured to operate according to a voltage mode; a voltage controller coupled with the memory cell, wherein the voltage controller is configured to change the voltage mode of the memory cell between a low voltage mode and a high voltage mode; and a memory controller module coupled with the memory cell, wherein the memory controller is configured to invert a logic state stored in the memory cell based on the voltage mode. |
| 地址 |
Sunnyvale CA US |
