METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable a replacement gate process without using a CMP method, and to suppress in-plane variation and defects of a foundation film and reduce the process cost.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: forming a dummy gate 6 on a semiconductor substrate 1; depositing an embedding insulating film 9 on the substrate 1 and the dummy gate 6, and embedding the dummy gate 6 by the embedding insulating film 9; etching a part of the embedding insulating film 9 to form an air gap 10 to a peripheral part of the dummy gate 6; etching the dummy gate 6 exposed due to the formation of the air gap 10 to remove the dummy gate 6 and the embedding insulating film 9 on the dummy gate 6; and forming a gate electrode 13 on the substrate 1 exposed due to the removal of the dummy gate 6, via a gate insulating film 12.