发明名称 |
LINE VOLTAGE BOOST SYSTEM AND METHOD FOR NON-VOLATILE MEMORY DEVICES AND MEMORY DEVICES AND PROCESSOR-BASED SYSTEM USING SAME |
摘要 |
The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array. |
申请公布号 |
US2014204674(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201414223734 |
申请日期 |
2014.03.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Moschiano Violante;Santin Giovanni;Di Iorio Ercole |
分类号 |
G11C16/12 |
主分类号 |
G11C16/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
applying a program voltage to a node of a driver transistor coupled to a selected access line of a memory; and after applying the program voltage to the node of the driver transistor, increasing a voltage of an access line that is adjacent to the selected access line. |
地址 |
BOISE ID US |