发明名称 LINE VOLTAGE BOOST SYSTEM AND METHOD FOR NON-VOLATILE MEMORY DEVICES AND MEMORY DEVICES AND PROCESSOR-BASED SYSTEM USING SAME
摘要 The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
申请公布号 US2014204674(A1) 申请公布日期 2014.07.24
申请号 US201414223734 申请日期 2014.03.24
申请人 MICRON TECHNOLOGY, INC. 发明人 Moschiano Violante;Santin Giovanni;Di Iorio Ercole
分类号 G11C16/12 主分类号 G11C16/12
代理机构 代理人
主权项 1. A method, comprising: applying a program voltage to a node of a driver transistor coupled to a selected access line of a memory; and after applying the program voltage to the node of the driver transistor, increasing a voltage of an access line that is adjacent to the selected access line.
地址 BOISE ID US