SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

摘要

A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

主权项

1. A solid-state imaging device comprising:
a first pixel including:
a first plurality of photoelectric conversion portions;a first transistor portion shared by the first plurality of photoelectric conversion portions, the first transistor portion including a first reset transistor, a first amplification transistor, and a first selection transistor; and a second pixel including:
a second plurality of photoelectric conversion portions;a second transistor portion shared by the second plurality of photoelectric conversion portions, the second transistor portion including a second reset transistor, a second amplification transistor, and a second selection transistor, wherein the first selection transistor, the first amplification transistor, the second amplification transistor, and the second selection transistor are adjacent one another in a first row in this order, and wherein the first reset transistor and the second reset transistor are disposed in a second row.