发明名称 |
DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE |
摘要 |
The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray. |
申请公布号 |
US2014203458(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201414221314 |
申请日期 |
2014.03.21 |
申请人 |
NITTO DENKO CORPORATION |
发明人 |
TAKAMOTO Naohide;SHIGA Goji;ASAI Fumiteru;SUGIMURA Toshimasa |
分类号 |
H01L21/683;H01L21/78 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
1. A dicing tape-integrated film for semiconductor back surface, comprising a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape,
the dicing tape comprising a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray. |
地址 |
Osaka JP |