发明名称 Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof
摘要 In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.
申请公布号 US2014203399(A1) 申请公布日期 2014.07.24
申请号 US201414219944 申请日期 2014.03.19
申请人 Infineon Technologies AG 发明人 Hofmann Renate;Ahrens Carsten;Klein Wolfgang;Glas Alexander
分类号 H01L49/02;H01F27/28 主分类号 H01L49/02
代理机构 代理人
主权项 1. A semiconductor device comprising: a first inductor coil within and/or over a substrate, the first inductor coil formed adjacent a top side of the substrate; first trenches disposed within the substrate adjacent the first inductor coil, wherein the first trenches are filled at least partially with a magnetic fill material; and a backside magnetic layer disposed under a first portion of the substrate at a bottom side, wherein the backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil, wherein the backside magnetic layer comprises a structured layer disposed under the first inductor coil, wherein, at the bottom side, a second portion of the substrate is not covered by the backside magnetic layer.
地址 Neubiberg DE