主权项 |
1. A semiconductor device comprising:
a first inductor coil within and/or over a substrate, the first inductor coil formed adjacent a top side of the substrate; first trenches disposed within the substrate adjacent the first inductor coil, wherein the first trenches are filled at least partially with a magnetic fill material; and a backside magnetic layer disposed under a first portion of the substrate at a bottom side, wherein the backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil, wherein the backside magnetic layer comprises a structured layer disposed under the first inductor coil, wherein, at the bottom side, a second portion of the substrate is not covered by the backside magnetic layer. |