EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTOR WITH AN EPITAXIAL SOURCE AND DRAIN HAVING A LOW EXTERNAL RESISTANCE

摘要

An aspect of this invention is a method for fabricating an extremely thin semiconductor-on-insulator (ETSOI) field-effect transistor (FET) having an epitaxial source and drain. The method includes providing an ETSOI substrate; forming at least one isolation structure on the ETSOI substrate; forming a gate on the ETSOI substrate; forming a spacer-on the ETSOI substrate; and using an epitaxial growth process to provide a raised source/drain structure having a non-uniform concentration of carbon along a vertical axis.

主权项

1. A method for fabricating an extremely thin semiconductor-on-insulator (ETSOI) field-effect transistor (FET) having an epitaxial source and drain, the method comprising:
providing an ETSOI substrate; forming at least one isolation structure on the ETSOI substrate; forming a gate on the ETSOI substrate; forming a spacer on the ETSOI substrate; using an epitaxial growth process to provide a raised source/drain structure having a non-uniform concentration of carbon; wherein the epitaxial growth process provides a single epitaxial layer having a bottom portion, a top portion and a carbon gradient such that the bottom portion is provided with a higher concentration of carbon relative to the top portion; and forming a plurality of ohmic contacts to the top portion of the epitaxial layer.