SEMICONDUCTOR DEVICE

摘要

In order to provide a semiconductor device with high electrostatic discharge (ESD) resistance, each of a plurality of source wires (22) is constituted by a metal film of the same shape; each of a plurality of sources (12) is electrically connected to a ground voltage wire (22a); each of a plurality of drain wires (23) is constituted by a metal film of the same shape; each of a plurality of drains (13) is electrically connected to an input voltage wire (23a); each of a plurality of gate wires (21) is constituted by a metal film of the same shape; and each of a plurality of gates (11) is electrically connected to the ground voltage wire (22a). In addition, a back gate wire (24) is constituted by a metal film; a back gate (14) is electrically to the ground voltage wire (22a); and the back gate wire (24) is separate from the source wires (22) on the sources (12).