发明名称 DUAL-SUBSTRATE STACK MEMORY
摘要 <p>Disclosed is a dual-substrate stack memory in which: memory cell arrays, sense amplifiers for recording data on the memory cell arrays or reading the data recorded on the memory cell array, and write driving units are implemented in one substrate; and a buffer for temporarily storing data read from the memory cell arrays or temporarily storing data to be recorded on the memory cell arrays is implemented in the other substrate, so as to use the substrates by electrically bonding the substrates. The dual-substrate stack memory, according to the present invention, has a first substrate and a second substrate of which upper surfaces are bonded with each other or an upper surface and a lower surface are bonded.</p>
申请公布号 WO2014112758(A1) 申请公布日期 2014.07.24
申请号 WO2014KR00357 申请日期 2014.01.13
申请人 SILICONFILE TECHNOLOGIES INC. 发明人 AHN, SANG WOOK
分类号 H01L27/00;H01L21/77 主分类号 H01L27/00
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