WIRING STRUCTURES FOR THREE-DIMENSIONAL SEMICONDUCTOR DEVICES

摘要

Wiring structures of three-dimensional semiconductor devices and methods of forming the same are provided. The wiring structures may include an upper wordline and a lower wordline, each of which extends in a longitudinal direction. The upper wordline may include a recessed portion that extends for only a portion of the upper wordline in a transverse direction and the lower wordline may include a wiring area exposed by the recessed portion of the upper wordline. The wiring structures may also include an upper contact plug contacting the upper wordline and a lower contact plug contacting the wiring area. The upper and lower contact plugs may extend in a vertical direction.

主权项

1. A wiring structure, comprising:
a first structure including first step layers, wherein each of the first step layers includes a first word line and a second word line stacked on the first word line in a first direction and extends in a second direction, the first step layers are spaced apart from each other in the first direction, the first direction is substantially perpendicular to an upper surface of a substrate, the second direction is substantially parallel to the upper surface of the substrate, and each of the second word lines includes a first dent at an end portion thereof in the second direction; a second structure including second step layers and being disposed adjacent to the first structure in a third direction, wherein each of the second step layers includes a third word line and a fourth word line stacked on the third word line in the first direction and extends in the second direction, the second step layers are spaced apart from each other in the first direction, the third direction is substantially parallel to the upper surface of the substrate and is substantially perpendicular to the second direction, each of the fourth word lines includes a second dent at an end portion thereof in the second direction, and each of the second dents is a mirror image of one of the first dents about an axis extending between the first and second structures; first contact plugs contacting respective upper surfaces of the first wordlines exposed by the first dents and respective upper surfaces of the third word lines exposed by the second dents; second contact plugs contacting respective upper surfaces of the second and fourth word lines; a first connecting pattern connecting immediately adjacent ones of the first contact plugs, which are arranged along the third direction; a first wiring line extending in the third direction, wherein the first wiring line is spaced apart from the first contact plugs and is electrically connected to the first connecting pattern; and a second wiring line extending in the third direction, wherein the second wiring line is spaced apart from the second contact plugs and is electrically connected to at least one of the second contact plugs.