发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE PRODUCED USING PRODUCTION METHOD |
摘要 |
A method for producing a semiconductor device includes laser welding to bond an upper terminal and a lower terminal as internal wiring members of the semiconductor device. When the upper terminal is fixed to the lower terminal by the laser welding, a gap between an upper surface of the lower terminal and a lower surface of the upper terminal is equal to or more than 20 μm and equal to or less than 400 μm. |
申请公布号 |
US2014203420(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201214239014 |
申请日期 |
2012.09.12 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
Miyasaka Toshiyuki;Tamai Yuta |
分类号 |
B23K26/20;H01L23/495 |
主分类号 |
B23K26/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kawasaki-shi JP |