发明名称 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE PRODUCED USING PRODUCTION METHOD
摘要 A method for producing a semiconductor device includes laser welding to bond an upper terminal and a lower terminal as internal wiring members of the semiconductor device. When the upper terminal is fixed to the lower terminal by the laser welding, a gap between an upper surface of the lower terminal and a lower surface of the upper terminal is equal to or more than 20 μm and equal to or less than 400 μm.
申请公布号 US2014203420(A1) 申请公布日期 2014.07.24
申请号 US201214239014 申请日期 2012.09.12
申请人 FUJI ELECTRIC CO., LTD. 发明人 Miyasaka Toshiyuki;Tamai Yuta
分类号 B23K26/20;H01L23/495 主分类号 B23K26/20
代理机构 代理人
主权项
地址 Kawasaki-shi JP