SEMICONDUCTOR DEVICES

摘要

Semiconductor devices include a first gate pattern provided on the first active region, a second gate pattern over the first active region, a third gate pattern over the second active region, and a fourth gate pattern over the second active region. The second gate pattern is parallel to the first gate pattern in a first direction. The third gate pattern has an asymmetric shape to the first gate pattern with respect to the first direction, and the fourth gate pattern is parallel to the third gate pattern in the first direction, and has an asymmetric shape to the second gate pattern with respect to the first direction. MOS transistors having good properties may be provided in a narrow horizontal area. The MOS transistors may be used in highly stacked semiconductor devices.

主权项

1. A semiconductor device, comprising:
a substrate including neighboring first and second active regions and a device isolation region between the first and second active regions; a first gate pattern over the first active region; a second gate pattern over the first active region, the second gate pattern being parallel to the first gate pattern in a first direction; a third gate pattern over the second active region, the third gate pattern having an asymmetric shape to the first gate pattern with respect to the first direction; and a fourth gate pattern over the second active region, the fourth gate pattern being parallel to the third gate pattern in the first direction, and having an asymmetric shape to the second gate pattern with respect to the first direction.