REDUCING CONTACT RESISTANCE BY DIRECT SELF-ASSEMBLING

摘要

As stated above, methods of forming a source/drain contact for a transistor are disclosed. In one embodiment, a transistor is formed on a semiconductor-on-insulator (SOI) substrate, which includes a semiconductor-on-insulator (SOI) layer, a buried insulator layer and a silicon substrate. This forming can include forming a gate and a source/drain region. A hardmask can then be formed over the transistor and a self-assembling (DSA) polymer can be directed to cover a portion of the source/drain region. A set of trenches can be formed through the hardmask and into the source/drain region using the DSA polymer as a mask. Then the polymer and the hardmask can be stripped, leaving the trenched source/drain region.

主权项

1. A method of forming a source/drain contacts for a transistor, the method comprising:
forming a transistor on a semiconductor-on-insulator (SOI) substrate, the forming including forming a gate and a source/drain region, the SOI substrate including a semiconductor-on-insulator (SOI) layer, a buried insulator layer and a silicon substrate; forming a hardmask over the transistor; directing a self-assembling (DSA) polymer to cover a portion of the source/drain region; forming a series of trenches through the hardmask and into the source/drain region using the DSA polymer as a mask; and stripping the polymer, and the hardmask.