SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes: an FET chip; pads provided on an upper surface of the FET chip; bumps provided on at least one of the pads; leads having first portions that are connected to the FET chip by the bumps and extend along the upper surface of the FET chip, and second portions that contact surfaces of the first portions along the upper surface of the FET chip and extend along a side surface of the FET chip, the first and second portions being formed by press or cutting; and a seal layer that seals the FET chip and the leads and a surface from which the second portions of the leads are exposed, the surface of the seal layer being on a lower surface side of the FET chip.

主权项

1. A semiconductor device comprising:
a field effect transistor (FET) chip; pads provided on an upper surface of the FET chip; bumps provided on at least one of the pads; leads that include first portions that are connected to the FET chip by the bumps and extend along the upper surface of the FET chip, and second portions that contact surfaces of the first portions along the upper surface of the FET chip and extend along a side surface of the FET chip, the leads being formed by press or cutting; and a seal layer that seals the FET chip and the leads and a surface from which the second portions of the leads are exposed, the surface of the seal layer being on a lower surface side of the FET chip.