COMPLEMENTARY RESISTANCE SWITCH, CONTACT-CONNECTED POLYCRYSTALLINE PIEZO- OR FERROELECTRIC THIN-FILM LAYER, METHOD FOR ENCRYPTING A BIT SEQUENCE

摘要

In accordance with various embodiments, a complementary resistance switch can comprise: two outer contacts (T1, T2), between which two piezo- or ferroelectric layers (11a and 11b) are situated, which are separated from one another by an inner common contact, characterized in that at least once region of the piezo- or ferroelectric layer (11a and 11b) is modified at least once in such a way that in the piezo- or ferroelectric layer (11a and 11b) in each case between the inner contact and the associated outer contact a region (11') having the thickness (d') arises, which can be modified at least additionally in a region (11") having the thickness (d"), wherein a) the outer contacts are surface contacts (Sa) and (Sb) and the inner contact is a common associated counter-contact (O) or the outer contacts are counter-contacts (Oa) and (Ob) and the inner contact is a common associated surface contact (S), b) the surface contacts (S), (Sa) and (Sb) are rectifying and the counter-contacts (O) or (Oa) and (Ob) are non-rectifying, c) the modified regions in the piezo- or ferroelectric layer (11a and 11b) form at the surface contacts (S) or (Sa) and (Sb), d) the piezo- or ferroelectric layers (11, 11', 11") have different strain-dependent structural phases having different band gaps and/or different polarization charges, and e) the electrical conductivity of the piezo- or ferroelectric layers (11, 11', 11") is different.