发明名称 |
AIN/GAN LAYERS GROWN ON REO/SILICON |
摘要 |
III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (A1N) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. |
申请公布号 |
WO2014113224(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
WO2014US10178 |
申请日期 |
2014.01.03 |
申请人 |
TRANSLUCENT, INC. |
发明人 |
ARKUN, ERDEM;LEBBY, MICHAEL;CLARK, ANDREW;DARGIS, RYTIS |
分类号 |
H01L21/20;H01L21/314;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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