SILICON CARBIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

摘要

Provided is a silicon carbide semiconductor device in which a first area (RA) of a silicon carbide film (90) comprises a first breakdown voltage-sustaining layer (81A), a charge compensation area (71A), a first junction terminal area (72A), and a first guard ring area (73A). A second area (RB) of the silicon carbide film (90) comprises a second breakdown voltage-sustaining layer (81B), a channel formation area (82), and a source area (83). The first and second breakdown voltage-sustaining layers (81A, 81B) constitute a breakdown voltage-sustaining area (81) having a thickness (T) in an element section (CL). The silicon carbide semiconductor device is configured so that when voltage is applied such that the maximum electric field strength in the breakdown voltage-sustaining area (81) is 0.4 MV/cm or higher while in an off state, the maximum electric field strength in the second area (RB) within the element section (CL) is less than 2/3 of the maximum electric field strength in the first area (RA).