<p>A thin film stack has a first layer including silicon dioxide and a second layer directly on the first layer that includes a blend of zinc oxide and silicon dioxide. A third layer that includes zinc oxide is directly on the second layer.</p>
申请公布号
WO2014113032(A1)
申请公布日期
2014.07.24
申请号
WO2013US22374
申请日期
2013.01.21
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人
ABBOTT, JR., JAMES ELMER;MARDILOVICH, PETER;SHELTON, CHRISTOPHER
