发明名称 |
METHOD OF PATTERNING A SILICON NITRIDE DIELECTRIC FILM |
摘要 |
<p>Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.</p> |
申请公布号 |
WO2014113398(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
WO2014US11511 |
申请日期 |
2014.01.14 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NEMANI, SRINIVAS D.;PENDER, JEREMIAH T.;ZHOU, QINGJUN;LUBOMIRSKY, DMITRY;BELOSTOTSKIY, SERGEY G. |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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