| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thyristor with improved lightning surge strength at the time of gate-on.SOLUTION: A thyristor 100 includes: a semiconductor substrate 10 in which N-type emitter regions 21 and 22 are formed in a rectangular P-type first region; a gate electrode 12 formed on the first region, the gate electrode 12 being disposed at a corner of the first region; and a cathode electrode 14 formed on the emitter region 22. The thyristor 100 further includes an auxiliary electrode 13 disposed so as to straddle between the first region and the emitter region 21. The auxiliary electrode 13 is composed of a gate facing portion 13a facing the gate electrode 12 and an arm portion 13b extending along an outer edge of the cathode electrode 14 without facing the gate electrode 12. The cathode electrode 14 has a side 14b parallel to a side of the semiconductor substrate 10 and a side 14c protruding to an outer edge side of the semiconductor substrate 10 so as to cross the side 14b, and the side 14c faces an end of the arm portion 13b.</p> |
