| 摘要 |
PROBLEM TO BE SOLVED: To form a nitride film or an oxynitride film which has a low hydrogen concentration, good uniformity in film thickness and good step coverage.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming, on a substrate, a film which contains at least one element selected from a group consisting of nitrogen, carbon and boron, a predetermined element and oxygen by performing a cycle predetermined times, the cycle including: a process of supplying, to the substrate, a material gas which contains the predetermined element, chlorine and oxygen and has chemical bonds between the predetermined element and oxygen; and a process of supplying, to the substrate, a reaction gas which contains at least one element selected from a group consisting of nitrogen, carbon and boron. |
