发明名称 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE, OPERATION METHOD OF THE SAME, AND SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide: a three-dimensional semiconductor device having an increased degree of integration; an operation method of the three-dimensional semiconductor device; and a semiconductor device.SOLUTION: A three-dimensional semiconductor device according to the present invention includes: first and second selection lines stacked in order; an upper line horizontally crossing the first and second selection lines; and first and second vertical patterns connected in common to the upper line while vertically crossing the first and second selection lines. Each of the first and second vertical patterns constitutes first and second selection transistors that are connected in series to each other, while the first and second selection transistors respectively have first and second threshold voltages that are different from each other, and the first selection transistors of the first and second vertical patterns are controlled by the first and second selection lines, respectively.</p>
申请公布号 JP2014135492(A) 申请公布日期 2014.07.24
申请号 JP20140003402 申请日期 2014.01.10
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE CHANG-HYUN;HWANG SUNG-MIN
分类号 H01L27/115;H01L21/336;H01L21/8234;H01L21/8236;H01L21/8247;H01L27/088;H01L29/788;H01L29/792 主分类号 H01L27/115
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