SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.

主权项

1. A method of manufacturing a semiconductor light emitting device, the method comprising:
preparing a substrate; forming a first conductivity type semiconductor base layer on the substrate; forming an insulating film having a plurality of openings on the first conductivity type semiconductor base layer, the openings allowing the first conductivity type semiconductor base layer to be selectively exposed; forming a plurality of first conductivity type semiconductor cores on portions of the first conductivity type semiconductor base layer exposed through the plurality of openings, each of the first conductivity type semiconductor cores formed to have either a rod shape or a pyramid shape; forming an active layer on a surface of each of the first conductivity type semiconductor cores; and forming a second conductivity type semiconductor layer on the active layer for each first conductive type semiconductor core to enclose the active layer, the second conductivity type semiconductor layer for each first conductive type semiconductor core having a dome shape; wherein each first conductivity type semiconductor core together with a respective active layer and a respective second conductivity type semiconductor layer sequentially formed thereon forms a light emitting nanostructure such that the light emitting device includes a plurality of light emitting nanostructures.