| 发明名称 |
DRIVE CIRCUIT AND METHOD FOR A GATED SEMICONDUCTOR SWITCHING DEVICE |
| 摘要 |
Drive circuit and method for a gated semiconductor switching device A drive circuit and method for a gated semiconductor switching device (10) comprising providing coupling such as a mutual inductance between a gate drive circuit (21) for the device and a drain to source current supply circuit (22) for the device in order to change a gate voltage provided by the gate drive circuit dependent on a rate of change of a current in the drain to source current supply circuit. The change in gate voltage has a magnitude and phase arranged to increase or decrease a switching speed of the gated semiconductor switching device. |
| 申请公布号 |
US2014203849(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201214238697 |
申请日期 |
2012.08.10 |
| 申请人 |
Richardson Robert |
发明人 |
Richardson Robert |
| 分类号 |
H03K3/012 |
主分类号 |
H03K3/012 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A drive circuit forming a combination with a gated semiconductor switching device having a gate drive circuit and a drain to source current supply circuit, the drive circuit comprising: coupling circuitry to form a mutual inductance coupling between a the gate drive circuit and the drain to source current supply circuit to change a gate voltage provided by the gate drive circuit dependent on a rate of change of a current in the drain to source current supply circuit, the change in gate voltage having a magnitude and phase arranged to change a switching speed of the gated semiconductor switching device. |
| 地址 |
Chelmsford GB |
