| 摘要 |
A semiconductor light-emitting device can include a wavelength converting layer including a surrounding portion, which covers at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a substrate, a frame located on the substrate, the chip mounted on the substrate, a transparent material layer located on the wavelength converting layer so as to reduce from the wavelength converting layer toward a light-emitting surface thereof, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a color variation by using the surrounding portion and an inclined side surface of transparent material layer, and therefore can emit various colored lights including white light having a high light-emitting efficiency from a small light-emitting surface. |
| 主权项 |
1. A semiconductor light-emitting device comprising:
a substrate having a mounting surface and conductor patterns formed on the mounting surface; a semiconductor light-emitting chip having a top surface, a bottom surface, a side surface and at least one bottom chip electrode located on the bottom surface, and mounted on the mounting surface of the substrate via solder bumps, and the bottom chip electrode electrically connected to at least one of the conductor patterns of the substrate via at least one of the solder bumps; a transparent material layer having a top surface, a bottom surface and a side surface being formed in a tabular shape, located over the top surface of the semiconductor light-emitting chip, the bottom surface of the transparent material layer being larger than the top surface of the semiconductor light-emitting chip; a wavelength converting layer having a top surface and a side surface disposed between the bottom surface of the transparent material layer and the side surface of the semiconductor light-emitting chip, contacting with the bottom surface of the transparent material layer and the side surface of the semiconductor light-emitting chip, and therefore including a surrounding portion to surround the side surface of the semiconductor light-emitting chip with the wavelength converting layer, and the side surface of the wavelength converting layer extending from the side surface of the semiconductor light-emitting chip toward the bottom surface of the transparent material layer; a frame located adjacent the mounting surface of the substrate, and surrounding the wavelength converting layer and the transparent material layer; and a reflective material layer having a top surface disposed between the frame and the side surfaces of the wavelength converting layer and the transparent material layer and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the substrate while surrounding the solder bumps, wherein an area of the top surface of the transparent material layer is smaller than that of the top surface of the wavelength converting layer. |
